Some publications:

1. G. Sombrio, E. Oliveira, J. Strassner, J. Richter, Chr. Doering, H. Fouckhardt: Doped or quantum-dot layers as in situ etch-stop indicators for III/V semiconductor reactive ion etching (RIE) using re­flectance anisotrops spectroscopy. Micromachines, special issue on “Etching for Semiconductor Na­nofabrication” 12 (2021) 502 (14 pages), doi: 10.3390/mi12050502
2. H. Fouckhardt, Chr. Doering, M. Oulad Saiad: High shape-accuracy of surface roughnesses upon nano-moulding with optical elastomers. Opt. Mat. 118 (2021) 111230 (6 pages), doi: 10.1016/ j.optmat.2021.111230
3. H. Fouckhardt, Chr. Doering, M. Jaax, B. Laegel: Theory, simulation, fabrication, and characte­ri­za­tion of Galois scattering plates for the optical and the THz spectral range. AIP Advances 11 (2021) 065130 (10 pages), doi: 10.1063/5.0053843
4. G. Sombrio, E. Oliveira, J. Strassner, Chr. Doering, H. Fouckhardt: Interferometric in-situ III/V se­mi­conductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale mea­surement. J. Vac. Sci. Technol. JVST-B 39, 5 (2021) 052204 (7 pages), doi: 10.1116/6.0001209
5. Chr. Doering, J. Strassner, H. Fouckhardt: Microdroplet actuation via light line optoelectrowetting (LL-OEW). Int. J. Anal. Chem. (IJAC) vol. 2021 (2021) Article ID 3402411 (9 pages), doi: 10.1155/ 2021/3402411
6. J. Strassner, Chr. Doering, E. Oliveira, H. Fouckhardt: Optoelectrowetting (OEW) with push-actu­a­ti­on of microdroplets at small frequencies and OEW equations revisited. Sens. & Act. A: Phys. 334 (2022) Article ID 113331 (8 pages); doi: 10.1016/j.sna.2021.113331
7. Chr. Doering, J. Strassner, H. Fouckhardt: Lithography-free technology for the preparation of digital microfluidic (DMF) lab-chips with droplet actuation by optoelectrowetting (OEW). Int. J. Anal. Chem. (IJAC) vol. 2022 (2022) Article ID 2011170 (6 pages), doi: 10.1155/2022/2011170
8. E. Oliveira, J. Strassner, Chr. Doering, H. Fouckhardt: Reactive ion etching (RIE) induced surface rough­ness precisely monitored in-situ and in real time by reflectance anisotropy spectroscopy (RAS) in combination with principle component analysis (PCA). Advances in Materials Science and Engineering, vol. 2022 (2022), article ID 9747505 (7 pages), doi: 10.1155/2022/9747505
9. E. Oliveira, J. Strassner, Chr. Doering, H. Fouckhardt: Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE). Appl. Surf. Sc. 611 (2022) 155769 (9 pages), doi:10.1016/j.apsusc.2022.155769