Arbeitsgruppe Prof. Fouckhardt



Two recent publications:

  1. H. Fouckhardt, J. Richter, Chr. Doering, J. Strassner: In situ and real-time monitoring of doping levels by reflectance anisotropy spectroscopy (RAS) during molecular beam epitaxial (MBE) growth of III/V semiconductors. Advances in Materials Science and Engineering, vol. 2023 (2023), article ID 1319081 (12 pages), doi: 10.1155/2023/1319081
  2. E. Oliveira, Chr. Doering, H. Fouckhardt: Optimizing contact angle changes for droplet actuation by optoelectrowetting (OEW): A numerical multi-parameter analysis. Sens. & Act. A: Phys. 365 (2024), article ID 114835 (9 pages), doi: 10.1016/j.sna.2023.114835
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